Adsorption of transition-metal atoms on two-dimensional hexagonal boron nitride monolayer: A First-principles study

Authors

  • Muahammad Rafique Naich Herbin institute of Technology, China
  • Muhammad Hassan Herbin institute of Technology, China
  • Aziza Aftab Mehran University of Engineering and Technology jamshoro
  • Imran Nazir Unar Mehran University of Engineering and Technology jamshoro
  • Hidayatullah Mahar NFC Institute of Engineering and Technology, Multan
  • Sadiq Hussain NFC Institute of Engineering and Technology, Multan
  • Kanwar Saleem Akhtar NFC Institute of Engineering and Technology, Multan

Keywords:

Adsorption, Transition-metal, Band gap, Absorption

Abstract

Adsorption of transition-metal atoms on (3×3) two-dimensional (2D) hexagonal boron-nitride (h-BN) monolayer has been investigated using plane-wave ultrasoft pseudo potential method based on density functional theory. Main focus have been placed on modified optical and electronic properties of the BN monolayer due to presence of adsorbate atoms. We have systematically investigated the adsorption of transition-metals atoms including (Ni, Fe, Co, Mn, and Cr) and it was found that these transition-metal atoms can be chemically adsorbed on 2D h-BN monolayer and that the process of adsorption is mainly exothermic. Firstly we determined the electronic and optical properties of (3×3) 2D h-BN monolayer without any adsorbate and it was observed that the band gap is around 4.744 eV. Upon adsorption of transition atoms band gap energy is reduced (< 1 eV). During adsorption Cr and Ni adsorb on Nitrogen atom of BN while Mn, Fe and Co adsorb on boron atom of BN. Cr, Ni, Fe and Co easily adsorb on h-BN and Mn forms weak bond with BN monolayer. The absorption peak of h-BN without any adsorbate is around 6.5 × 104 cm-1, and it is reduced to 5.5 × 104 cm-1 when transition atoms are adsorbed on h-BN. In most cases transition-metal atoms adsorption process can introduce impurity states in the band gap of h-BN due to presence of valence electrons in s and d orbital, thereby band gap theory was reduced.

Author Biographies

Muahammad Rafique Naich, Herbin institute of Technology, China

Chemical Engineering, PhD Scholar

Muhammad Hassan, Herbin institute of Technology, China

Chemical Engineering, PhD Scholar

Aziza Aftab, Mehran University of Engineering and Technology jamshoro

Chemical Engineering, Assistant Professor

Imran Nazir Unar, Mehran University of Engineering and Technology jamshoro

Chemical Engineering, Assistant Professor

Hidayatullah Mahar, NFC Institute of Engineering and Technology, Multan

Chemical Engineering, Assistant Professor

Sadiq Hussain, NFC Institute of Engineering and Technology, Multan

Chemical Engineering, Assistant Professor

Kanwar Saleem Akhtar, NFC Institute of Engineering and Technology, Multan

Chemical Engineering, Assistant Professor

Additional Files

Published

2016-08-16

How to Cite

Naich, M. R., Hassan, M., Aftab, A., Unar, I. N., Mahar, H., Hussain, S., & Akhtar, K. S. (2016). Adsorption of transition-metal atoms on two-dimensional hexagonal boron nitride monolayer: A First-principles study. Journal of the Pakistan Institute of Chemical Engineers, 44(1), 84–91. Retrieved from http://piche.org.pk/journal/index.php/jpiche/article/view/289